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DS-CPC3708-R03

1

CPC3708

350V N-Channel

Depletion Mode FET

Part Number

Description

CPC3708CTR

SOT-89: Tape and Reel (1000/Reel)

CPC3708ZTR

SOT-223: Tape and Reel (1000/Reel)

Applications

Features

Description

Ordering Information

Package Pinout:

DS(on)

at Cold Temperatures

 (Typical) @ 25°C

The CPC3708 is a N-channel, depletion mode Field

Effect Transistor (FET) that is available in an

SOT-223 package (CPC3708Z) and an SOT-89

package (CPC3708C). Both utilize IXYS Integrated

Circuits Division’s proprietary third-generation

vertical DMOS process that realizes world class,

high voltage MOSFET performance in an economical

silicon gate process. The vertical DMOS process

yields a highly reliable device, particularly for

use in difficult application environments such as

telecommunications, security, and power supplies.

CPC3708Z and the CPC3708C have a typical

on-resistance of 8

 and a drain-to-source voltage

of 350V. As with all MOS devices, the FET structure

prevents thermal runaway and thermally induced

secondary breakdown.

Pin Number

Name

1GATE

2

DRAIN

3

SOURCE

4

DRAIN

Parameter

Rating

Units

Drain-to-Source Voltage - V

(BR)DSX

350

V

Max On-Resistance - R

DS(on)

14



Max Power

SOT-89 Package

1.1

W

SOT-223 Package

2.5

Circuit Symbol

D

G

D

S

4

123

D

S

G