PRELIMINARY

PRELIMINARY

DS-CPC3909-R00D

1

CPC3909

400V N-Channel

Depletion-Mode FET

Part Number

Description

CPC3909CTR

SOT-89: Tape and Reel (1000/Reel)

CPC3909ZTR

SOT-223: Tape and Reel (1000/Reel)

Applications

Features

Description

Ordering Information

Package Pinout:

DS(on)

at Cold Temperatures

 (Typical) @ 25°C

The CPC3909 is an N-channel, depletion mode Field

Effect Transistor (FET) that is available in an

SOT-223 package (CPC3909Z) and an SOT-89

package (CPC3909C). Both utilize IXYS Integrated

Circuits Division’s proprietary vertical DMOS process

that realizes world class, high voltage MOSFET

performance in an economical silicon gate process.

The vertical DMOS process yields a highly reliable

device, particularly for use in difficult application

environments such as telecommunications, security,

and power supplies.

CPC3909Z and the CPC3909C have a typical

on-resistance of 4.5

 and a drain-to-source voltage

of 400V. As with all MOS devices, the FET structure

prevents thermal runaway and thermally induced

secondary breakdown.

Pin Number

Name

1GATE

2

DRAIN

3

SOURCE

4

DRAIN

Parameter

Rating

Units

Drain-to-Source Voltage - V

(BR)DSX

400

V

Max On-Resistance - R

DS(on)

6



Max Power

SOT-89 Package

1.1

W

SOT-223 Package

2.5

Circuit Symbol

D

G

D

S

4

123

D

S

G