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DS-CPC5603-R08

1

CPC5603

N-Channel Depletion Mode FET

Applications

Features

Description

Ordering Information

Package Pinout

Pin Number

Name

1GATE

2

DRAIN

3

SOURCE

4

DRAIN

Data Access Arrangement (DAA)

DS(on)

at Cold Temperatures

 (Typical) @ 25°C

The CPC5603 is an N-channel, depletion mode Field

Effect Transistor (FET) that utilizes IXYS Integrated

Circuits Division’s proprietary third-generation vertical

DMOS process. The third generation process realizes

world class, high voltage MOSFET performance in an

economical silicon gate process. The vertical DMOS

process yields a highly reliable device particularly

in difficult application environments such as

telecommunications, security, and power supplies.

One of the primary applications for the CPC5603 is

as a linear regulator/hook switch for the LITELINK™

family of Data Access Arrangements (DAA) Devices

CPC5620A, CPC5621A, and CPC5622A.

The CPC5603 has a typical on-resistance of 8

, a

drain-to-source voltage of 415V and is available in

the SOT-223 package. As with all MOS devices, the

FET structure prevents thermal runaway and

thermal-induced secondary breakdown.

Parameter

Rating

Units

Drain-to-Source Voltage - V

DS

415

V

Max On-Resistance - R

DS(on)

14



Max Power

2.5

W

D

G

D

S

4

1

2

3

Part #

Description

CPC5603CTR

N-Channel Depletion Mode FET, SOT-223 Pkg.

Tape and Reel (1000/Reel)