IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFY8N65X2

IXFA8N65X2

IXFP8N65X2

Note 1. Pulse test, t

 300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

3.6

6.0

S

R

Gi

Gate Input Resistance

5



C

iss

790

pF

C

oss

V

590

pF

C

rss

2.2

pF

C

o(er)

42

pF

C

o(tr)

130

pF

t

d(on)

17

ns

t

r

11

ns

t

d(off)

29

ns

t

f

15

ns

Q

g(on)

11.0

nC

Q

gs

V

2.3

nC

Q

gd

6.2

nC

R

thJC

0.83

C/W

R

thCS

TO-220

0.50

C/W

Resistive Switching Times

V

R

Effective Output Capacitance

Energy related

Time related

V

V

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

8

A

I

SM

Repetitive, pulse Width Limited by T

JM

32

A

V

SD

I

1.4

V

t

rr

105

ns

Q

RM

460

nC

I

RM

8.7

A

I

V