IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY8N65X2

IXTA8N65X2

IXTP8N65X2

Note 1. Pulse test, t

 300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

8

A

I

SM

Repetitive, pulse Width Limited by T

JM

32

A

V

SD

I

1.4

V

t

rr

200

ns

Q

RM

1.65

μC

I

RM

16.3

A

I

V

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

4.8

8.0

S

R

Gi

Gate Input Resistance

6



C

iss

800

pF

C

oss

V

495

pF

C

rss

2.2

pF

C

o(er)

43

pF

C

o(tr)

129

pF

t

d(on)

24

ns

t

r

28

ns

t

d(off)

53

ns

t

f

24

ns

Q

g(on)

12.0

nC

Q

gs

V

3.1

nC

Q

gd

4.4

nC

R

thJC

0.83

C/W

R

thCS

TO-220

0.50

C/W

Resistive Switching Times

V

R

Effective Output Capacitance

Energy related

Time related

V

V