VQ2001J datasheet(3/4 Pages) VISHAY

3 / 4 page

VP0300L/LS, VQ2001J/P

Vishay Siliconix

Document Number: 70217

S-04279—Rev. E, 16-Jul-01

www.vishay.com

11-3

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

–2.0

–1.6

–1.2

–0.8

–0.4

–1

–2

–3

–4

–5

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS = –10 V

–5 V

–8 V

–7 V

–6 V

VGS – Gate-to-Source Voltage (V)

–1000

–800

–600

–400

–200

–2

–4

–6

–8

–10

TJ = –55

125

–4 V

–9 V

Source-Drain Diode Forward Voltage

–1.0

–1.5

–2.0

–2.5

–3.0

–3.5

–4.0

–10 K

–1 K

–1

–100

–10

VSD – Source-to-Drain Voltage (V)

0.75

0.90

1.05

1.20

1.35

1.50

1.65

–50

–25

100

125

150

On-Resistance vs. Junction Temperature

VGS = –4.5 V

ID = –0.5 A

TJ – Junction Temperature (_C)

VGS = –10 V

ID = –0.1 A

1000

2000

3000

4000

5000

Gate Charge

Qg – Total Gate Charge (pC)

VDS – Drain-to-Source Voltage (V)

Capacitance

175

150

125

100

–5

–10

–15

–20

–25

–30

Crss

Coss

Ciss

VDS = –15 V

ID = –1 A

VDS = –24 V

ID = –1 A

–18

–15

–12

–9

–6

–3

VGS = 0 V

f = 1 MHz

–0.5

TJ = 25

TJ = 150

VQ2001J 数据表(PDF) 3 Page - Vishay Siliconix

VQ2001J 数据表(HTML) 3 Page - Vishay Siliconix

Html Pages

1 2 3 4

数据表下载