VQ2001P datasheet(1/4 Pages) VISHAY

部件名	VQ2001P

功能描述	P-Channel 30-V (D-S) MOSFETs

PDF	4 Pages

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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VP0300L/LS, VQ2001J/P

Vishay Siliconix

Document Number: 70217

S-04279—Rev. E, 16-Jul-01

www.vishay.com

11-1

P-Channel 30-V (D-S) MOSFETs

PRODUCT SUMMARY

Part Number

V(BR)DSS Min (V) rDS(on) Max (W)

VGS(th) (V)

ID (A)

VP0300L

2.5 @ VGS = –12 V

–2 to –4.5

–0.32

VP0300LS

2.5 @ VGS = –12 V

–2 to –4.5

–0.5

VQ2001J

–30

2 @ VGS = –12 V

–2 to –4.5

–0.6

VQ2001P

2 @ VGS = –12 V

–2 to –4.5

–0.6

FEATURES

BENEFITS

APPLICATIONS

D High-Side Switching

D Low On-Resistance: 1.5 W

D Moderate Threshold: –3.1 V

D Fast Switching Speed: 17 ns

D Low Input Capacitance: 60 pF

D Ease in Driving Switches

D Low Offset (Error) Voltage

D Low-Voltage Operation

D High-Speed Switching

D Easily Driven Without Buffer

D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories, Transistors, etc.

D Battery Operated Systems

D Power Supply, Converter Circuits

D Motor Control

TO-226AA

(TO-92)

Top View

S

D

G

1

2

3

TO-92S

(Copper Lead Frame)

Top View

S

D

G

1

2

3

Plastic: VQ2001J

Sidebraze: VQ2001P

VP0300L

VP0300LS

S3

1

2

3

4

5

6

7

14

13

12

11

10

9

8

Top View

Dual-In-Line

D1

D4

S1

S4

G1

G4

NC

G2

G3

S2

D2

D3

P

For device marking, see the last page of this data sheet.

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

VQ2001J/P

Parameter

Symbol

VP0300L

VP0300LS

Single

Total Quad

Unit

Drain-Source Voltage

VDS

–30

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current

TA= 25_C

–0.32

–0.5

–0.6

Continuous Drain Current

(TJ = 150_C)

TA= 100_C

ID

–0.2

–0.32

–0.37

A

Pulsed Drain Currenta

IDM

–2.4

–3

–2

TA= 25_C

0.8

0.9

1.3

2

Power Dissipation

TA= 100_C

PD

0.32

0.4

0.52

0.8

W

Thermal Resistance, Junction-to-Ambient

RthJA

156

139

96

62.5

_C/W

Operating Junction and

Storage Temperature Range

TJ, Tstg

–55 to 150

_C

Notes

a.

Pulse width limited by maximum junction temperature.

For applications information see AN804.

类似零件编号 - VQ2001P

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Vishay Siliconix	VQ2001P	250Kb / 4P	P-Channel Enhancement-Mode MOSFET Transistors
Vishay Siliconix	VQ2001P	56Kb / 5P	P-Channel 30-V (D-S) MOSFETs 16-Jul-01

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制造商	部件名	数据表	功能描述
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More results

VQ2001P 数据表(PDF) 1 Page - Vishay Siliconix

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VQ2001P 数据表(PDF) 1 Page - Vishay Siliconix

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类似说明 - VQ2001P

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