SS1636

Unipolar Hall Switch-High sensitivity

2

V3.10

Nov 1, 2013

General Description

The SS1636 Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced

chopper-stabilization techniques to provide accurate and stable magnetic switch points.

The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and

analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a

“Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall

element is evaluated against the predefined thresholds. If the flux density is above or below the Bop/Brp thresholds

then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is

latched in its previous state. The design has been optimized for service in applications requiring extended operating

lifetime in battery powered systems.

Pin Definitions and Descriptions

T

SOT Pin №

SIP Pin № Name

Type

Function

1

1

Supply

Supply Voltage pin

2

3

OUT

Output

Open Drain Output pin

3

2

GND

Ground

Ground pin

Absolute Maximum Ratings

Parameter

Symbol

Value

Units

Supply Voltage

5.5

V

Supply Current

70

μA

Output Voltage

5.5

V

Output Current

5

mA

Operating Temperature Range

-40 to 150

°C

Storage Temperature Range

-65 to 170

°C

ESD Sensitivity

4000

V

Operating Temperature Range

Symbol

Value

Units

Temperature Suffix “E”

-40 to 85

°C

Temperature Suffix “K”

-40 to 125

°C

Temperature Suffix “L”

-40 to 150

°C

Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-rated conditions for extended

periods may affect device reliability.