数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

SS2412ESTT 数据表(PDF) 5 Page - SEC Electronics Inc.

部件名 SS2412ESTT
功能描述  CMOS High Sensitivity Micropower Hall Latch
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  SECELECTRONICS [SEC Electronics Inc.]
网页  http://www.secsemi.com
标志 SECELECTRONICS - SEC Electronics Inc.

SS2412ESTT 数据表(HTML) 5 Page - SEC Electronics Inc.

  SS2412ESTT Datasheet HTML 1Page - SEC Electronics Inc. SS2412ESTT Datasheet HTML 2Page - SEC Electronics Inc. SS2412ESTT Datasheet HTML 3Page - SEC Electronics Inc. SS2412ESTT Datasheet HTML 4Page - SEC Electronics Inc. SS2412ESTT Datasheet HTML 5Page - SEC Electronics Inc. SS2412ESTT Datasheet HTML 6Page - SEC Electronics Inc. SS2412ESTT Datasheet HTML 7Page - SEC Electronics Inc. SS2412ESTT Datasheet HTML 8Page - SEC Electronics Inc. SS2412ESTT Datasheet HTML 9Page - SEC Electronics Inc.  
Zoom Inzoom in Zoom Outzoom out
 5 / 9 page
background image
SS2412
CMOS High Sensitivity Micropower Hall Latch
5
V3.10
Nov 1, 2013
Output Behavior versus Magnetic Pole
DC Operating Parameters TA = -40
°C to 150°C, VDD = 2.5 to 5.5V (unless otherwise specified)
Test Conditions (UA)
Test Conditions (SO)
OUT
B < BRP
B > BRP
High
B > BOP
B < BOP
Low
The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be turned on(drops low) in the presence of a
sufficiently strong North pole magnetic field applied to the marked face and turned off(hoists high) in the presence of a sufficiently
strong South pole magnetic field.
Unique Features
CMOS Hall IC Technology
The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage,
which, in bipolar devices, is a major source of temperature sensitive drift. CMOS makes this advanced technique
possible. The CMOS chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be
placed in less space. The small chip size also contributes to lower physical stress and less power consumption.
ESD Protection
Human Body Model (HBM) tests according to: Mil. Std. 883F method 3015.7
Parameter
Symbol
Limit Values
Unit
Notes
Min
Max
ESD Voltage
VESD
±4
kV
ESD Precautions
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro Static
Discharge control procedures whenever handling semiconductor products.



Html Pages

1 2 3 4 5 6 7 8 9


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com