SS2509-RESTT datasheet(4/8 Pages) SECELECTRONICS

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SS2509-R

Hall Latch - High Sensitivity

V3.10

Dec 1, 2014

Output Behavior versus Magnetic Pole

DC Operating Parameters TA = -40°C to 150°C, VDD = 3.5 to 24V (unless otherwise specified)

Test Conditions (UA)

Test Conditions (ST)

OUT

B > BRP

B < BRP

High

B < BOP

B > BOP

Low

The TSOT-23 device is reversed from the UA package. The TSOT-23 output transistor will be turned on(drops low) in the presence of a

sufficiently strong South pole magnetic field applied to the marked face and turned off(hoists high) in the presence of a sufficiently

strong North pole magnetic field.

Detailed General Description

The SS2509-R exhibits latch magnetic switching characteristics. Therefore, it requires both south and north poles

to operate properly.

In the case of UA package,the OUT pin of these devices switches low (turns on) when a magnetic field perpendic-

ular to the Hall sensor reduced below the operate point threshold, BOP. After turn-on, the output voltage is VDSon.

Note that the device latches, that is, a north pole of sufficient strength towards the branded surface of the device

turns the device on. The device remains on if the south pole is removed (B

→0). This latching property defines the

device as a magnetic memory.

When the magnetic field exceeds the release point, BRP, the OUT pin turns off (goes high). The difference in the

magnetic operating and release points is the hysteresis, BHYST, of the device. This built-in hysteresis prevents out-

put oscillation near the switching point, and allows clean switching of the output even in the presence of external

mechanical vibration and electrical noise.

The device behaves as a latch with symmetric operating and release switching points (|BOP|=BRP). This means

0mT

Output level

OUT = High

Flux density

OUT = High

BOP

23Gs typ

OUT = Low

UA package - Latch characteristic

BOP

-23Gs typ

BRP

-23Gs typ

BRP

23Gs typ

Flux density

ST package - Latch characteristic

BHYST

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