TP0101TS datasheet(2/4 Pages) VISHAY

2 / 4 page

TP0101T/TS

Vishay Siliconix

www.vishay.com

11-2

Document Number: 70229

S-04279—Rev. D, 16-Jul-01

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = –10 mA

–20

–26

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = –50 mA

–0.5

–0.9

–1.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

VDS = –9.6 V, VGS = 0 V

–1

Zero Gate Voltage Drain Current

IDSS

TJ = 55_C

–10

VDS v –5 V, VGS = –4.5 V

–2.5

On-State Drain Currenta

ID(on)

VDS v –5 V, VGS = –2.5 V

–0.5

VGS = –4.5 V, ID = –0.6 A

0.45

0.65

Drain-Source On-Resistancea

rDS(on)

VGS = –2.5 V, ID = –0.5 A

0.69

0.85

Forward Transconductancea

gfs

VDS = –5 V, ID = –0.6 A

1300

Diode Forward Voltagea

VSD

IS = –0.6 A, VGS = 0 V

–0.9

–1.2

Dynamic

Total Gate Charge

2020

3000

Gate-Source Charge

Qgs

VDS = –6 V, VGS =–4.5 V

ID ^ –0.6 A

180

Gate-Drain Charge

Qgd

ID ^ –0.6 A

720

Input Capacitance

Ciss

110

Output Capacitance

Coss

VDS = –6 V, VGS = 0, f = 1 MHz

Reverse Transfer Capacitance

Crss

Switching

td(on)

Turn-On Time

VDD = –6 V, RL = 12 W

td(off)

ID ^ –0.6 A, VGEN = –4.5 V

RG = 6 W

Turn-Off Time

Notes

Pulse test: PW

v300 ms duty cycle v2%.

VPLJ01

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