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SC8230 数据表(PDF) 2 Page - SamHop Microelectronics Corp.

部件名 SC8230
功能描述  Dual N-Channel Enhancement Mode Field Effect Transistor
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  SAMHOP [SamHop Microelectronics Corp.]
网页  http://www.samhop.com.tw
标志 SAMHOP - SamHop Microelectronics Corp.

SC8230 数据表(HTML) 2 Page - SamHop Microelectronics Corp.

  SC8230 Datasheet HTML 1Page - SamHop Microelectronics Corp. SC8230 Datasheet HTML 2Page - SamHop Microelectronics Corp. SC8230 Datasheet HTML 3Page - SamHop Microelectronics Corp. SC8230 Datasheet HTML 4Page - SamHop Microelectronics Corp. SC8230 Datasheet HTML 5Page - SamHop Microelectronics Corp. SC8230 Datasheet HTML 6Page - SamHop Microelectronics Corp. SC8230 Datasheet HTML 7Page - SamHop Microelectronics Corp. SC8230 Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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background image
m ohm
19.0
Symbol
Min
Typ
Max
Units
BVSSS
20
V
1
IGSS
±1
uA
VGS(th)
0.5
V
m ohm
VGS=4.5V , IS=4A
RSS(ON)
Source-Source On-State Resistance
ISSS
uA
Gate Threshold Voltage
VSS=VGS , IS=250uA
VSS=20V , VGS=0V
VGS= ±8V , VSS=0V
Zero Gate Voltage Source Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Source-Source Breakdown Voltage
VGS=0V , IS=250uA
ON CHARACTERISTICS
SC8230
0.7
1.5
gFS
24
S
Qg
203
nC
893
1910
1900
tD(ON)
16.6
ns
tr
ns
tD(OFF)
ns
tf
ns
SWITCHING CHARACTERISTICS
VDD=20V
IS=4A
VGS=4.0V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VSS=5V , IS=4A
Forward Transconductance
c
VDD=20V,IS=8A,
VG1S1=4.0V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VFSS
Diode Forward Voltage
VGS=0V,IS=1.5A
0.77
1.2
V
Note
a.Mounted on FR4 board of 25.4mm x 25.4mm x 1.6mm.
b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
c.Guaranteed by design, not subject to production testing.
www.samhop.com.tw
Sep,04,2015
2
m ohm
VGS=4.0V , IS=4A
20.0
m ohm
VGS=3.1V , IS=4A
21.0
m ohm
VGS=2.5V , IS=4A
30.0
9.5
10.0
11.0
13.0
15.0
16.0
17.5
23.0
__
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