BUXD87 datasheet(2/6 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

6.25

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEV

Collector Cut-off

Current (VBE = -1.5V)

VCE = 1000 V

Tj = 125

100

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

Collector-Emitter

Sustaining Voltage

IC = 100 mA

450

VBEO

Collector-Base

Sustaining Voltage

IC = 10 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 0.1 A

IB = 0.01 A

IC = 0.2 A

IB = 0.02 A

0.8

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 0.2 A

IB = 0.02 A

hFE

∗

DC Current Gain

IC = 50 mA

VCE = 5 V

IC = 40 mA

VCE = 5 V

Transition Frequency

IC = 50 mA

VCE = 10 V f=1MHz

MHz

RESISTIVE LOAD

Storage Time

Fall Time

VCC = 250 V

IC = 200 mA

IB1 = 40 mA

IB2= -80 mA

tp = 20

µs

4.5

0.5

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Derating Curves

BUXD87

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