VDD

OUT

PILOT

VSS

IN

INB

5

6

4

1

2

3

3

LM5134

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SNVS808C – MAY 2012 – REVISED FEBRURARY 2016

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5 Pin Configuration and Functions

DBV Package, NGG Package

6-Pin SOT-23, 6-Pin WSON

Top View

Pin Functions

PIN

I/O

DESCRIPTION

APPLICATION INFORMATION

NAME

NO.

VDD

1

—

Gate drive supply

Locally decouple to VSS using low ESR/ESL capacitor located as

close as possible to the IC.

PILOT

2

O

Gate drive output for an external

turnoff FET

Connect to the gate of a small turnoff MOSFET with a short, low

inductance path. The turnoff FET provides a local turnoff path.

OUT

3

O

Gate drive output for the power

FET

Connect to the gate of the power FET with a short, low inductance

path. A gate resistor can be used to eliminate potential gate

oscillations.

VSS

4

—

Ground

All signals are referenced to this ground.

INB

5

I

Inverting logic input

Connect to VSS when not used.

IN

6

I

Non-inverting logic input

Connect to VDD when not used.

EP

EP

—

Exposed Pad

It is recommended that the exposed pad on the bottom of the

package be soldered to ground plane on the PC board, and that

ground plane extend out from beneath the IC to help dissipate

heat.

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Pin voltage

VDD to VSS

−0.3

14

V

IN, INB to VSS

−0.3

14

150

°C

−55

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-

±1000