HBFP0420 datasheet(1/10 Pages) HP

部件名	HBFP0420

功能描述	High Performance Isolated Collector Silicon Bipolar Transistor

PDF	10 Pages

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制造商	HP [Agilent(Hewlett-Packard)]

网页	http://www.home.agilent.com

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High Performance Isolated

Collector Silicon Bipolar

Transistor

Technical Data

Features

• Ideal for High Gain, Low

Noise Applications

• Transition Frequency

fT = 25 GHz

• Typical Performance at

1.8 GHz

Associated Gain of 17 dB

and Noise Figure of 1.1 dB

at 2 V and 5 mA

P1dB of 12 dBm at 2 V and

20 mA

• Can be Used Without

Impedance Matching

Applications

• LNA, Oscillator, Driver

Amplifier, Buffer Amplifier,

and Down Converter for

Cellular and PCS Handsets

and Cordless Telephones

• Oscillator for TV Delivery

and TVRO Systems up to

10 GHz

HBFP-0420

Description

Hewlett Packard’s HBFP-0420 is a

high performance isolated

collector silicon bipolar junction

transistor housed in a 4-lead SC-70

(SOT-343) surface mount plastic

package.

HBFP-0420 provides an associated

gain of 17 dB, noise figure of

1.1 dB, and P1dB of 12 dBm at

1.8 GHz. Because of high gain and

low current characteristics,

HBFP-0420 is ideal for cellular/

PCS handsets

as well as for

C-Band and Ku-Band

applications.

This product is based on a 25 GHz

transition frequency fabrication

process, which enables the

products to be used for high

performance, low noise applica-

tions at 900 MHz, 1.9 GHz,

2.4 GHz, and beyond.

Surface Mount Plastic

Package/ SOT-343 (SC-70)

Outline 4T

Pin Configuration

Collector

Emitter

Base

Emitter

Note:

Package marking provides orientation

and identification.

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