FEATURES

HIGH INPUT IMPEDANCE

HIGH TRANSCONDUCTANCE

ABSOLUTE MAXIMUM RATINGS

1

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-65 to +150 °C

Operating Junction Temperature

-55 to +125 °C

Maximum Power Dissipation

Continuous Power Dissipation @ +125 °C

200mW

Maximum Currents

Drain Current

Maximum Voltages

Drain to Source

1

Gate to Source

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX UNITS

CONDITIONS

Drain to Source Voltage

-20

V

Gate to Source Voltage

-12

-10

-7

V

2,3

Common Source Forward Transconductance

30,000

µS

Common Source Output Conductance

300

µS

Gate to Source Input Resistance

100

GΩ

Input Capacitance

8

pF

Reverse Transfer Capacitance

1.5

pF

Noise Voltage

25

µV

BW = 50 to 15kHz

LS320

HIGH INPUT IMPEDANCE

BiFET AMPLIFIER

Linear Integrated Systems

PACKAGE OPTIONS

G

S

D

TO-92

BOTTOM VIEW

123

DS G

1

2

3

SOT-23

TOP VIEW

D

S

G

FUNCTIONAL SCHEMATIC

S

S

D

2

1

3

BOTTOM VIEW

TO-72

4

G

1.

Absolute maximum ratings are limiting values above which serviceability may be impaired.

2.

The gate to source voltage must never exceed 100V, t < 10ms.

3.

Additional screening available

Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its

use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio

otherwise under any patent or patent rights of Linear Integrated Systems.

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