Linear Integrated Systems

1

7

35

BOTTOM VIEW

2

6

31 X 32 MILS

D1

G1

S2

S1

G2

D2

G1

S2

S1

G2

D1

D2

FEATURES

ULTRA LOW NOISE

e

n

= 3nV/

√Hz TYP.

LOW LEAKAGE

I

G

= 15pA TYPs.

LOW DRIFT

|

∆V

GS1-2

/

∆T|= 5µV/°C max.

ULTRA LOW OFFSET VOLTAGE

IV

GS1-2

I= 1mV max.

ABSOLUTE MAXIMUM RATINGS NOTE 1

@ 25

°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

-65

° to +150°C

Operating Junction Temperature

+150

°C

Maximum Voltage and Current for Each Transistor NOTE 1

-V

GSS

Gate Voltage to Drain or Source

60V

-V

DSO

Drain to Source Voltage

60V

-I

G(f)

Gate Forward Current

50mA

Maximum Power Dissipation

Device Dissipation @ Free Air - Total

400mW @ +125

°C

ELECTRICAL CHARACTERISTICS @ 25

SYMBOL

CHARACTERISTICS

LS843

LS844

LS845

UNITS

CONDITIONS

|

∆V

GS1-2

/

∆T| max. Drift vs. Temperature

5

10

25

µV/°C

V

DG

= 10V

I

D

= 500

µA

T

A

= -55

°C to +125°C

|V

GS1-2

| max.

Offset Voltage

1

5

15

mV

V

DG

= 10V

I

D

= 500

µA

LS843 LS844 LS845

ULTRA LOW NOISE LOW DRIFT

MONOLITHIC DUAL N-CHANNEL JFET

SYMBOL

CHARACTERISTICS

MIN.

TYP.

MAX.

UNITS

CONDITIONS

BV

GSS

Breakdown Voltage

60

--

--

V

V

DS

= 0

I

D

= 1nA

BV

GGO

Gate-to-Gate Breakdown

60

--

--

V

I

G

= 1nA

I

D

= 0

I

S

= 0

TRANSCONDUCTANCE

Y

fss

Full Conduction

1500

--

--

µmho

V

DG

= 15V

V

GS

= 0

f= 1kHz

Y

fs

Typical Conduction

1000

1500

--

µmho

V

DG

= 15V

I

D

= 500

µA

|Y

fs1-2

/Y

fs

|

Mismatch

--

0.6

3

%

DRAIN CURRENT

I

DSS

Full Conduction

1.5

5

15

mA

V

DG

= 15V

V

GS

= 0

|I

DSS1-2

/I

DSS

|

Mismatch at Full Conduction

--

1

5

%

GATE VOLTAGE

V

GS

(off) or V

P

Pinchoff Voltage

1

--

3.5

V

V

DS

= 15V

I

D

= 1nA

V

GS

Operating Range

0.5

--

3.5

V

V

DS

= 15V

I

D

= 500

µA

GATE CURRENT

-I

G

Operating

--

15

50

pA

V

DG

= 15V

I

D

= 500

µA

-I

G

High Temperature

--

--

50

nA

V

DG

= 15V

I

D

= 500

µAT

A

= +125

°C

-I

G

Reduced VDG

--

5

30

pA

V

DG

= 3V

I

D

= 500

µA

-I

GSS

At Full Conduction

--

--

100

pA

V

DG

= 15V

V

DS

= 0