11AA02UID

DS20005206A-page 2

 2013 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Storage temperature .................................................................................................................................-65°C to 150°C

Ambient temperature under bias .................................................................................................................-40°C to 85°C

ESD protection on all pins ..........................................................................................................................................4 kV

TABLE 1-1:

DC CHARACTERISTICS

† NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an

extended period of time may affect device reliability.

DC CHARACTERISTICS

Electrical Characteristics:

Industrial (I):

Param.

No.

Sym.

Characteristic

Min.

Max.

Units

Test Conditions

D1

High-level Input

Voltage

V

D2

Low-level Input

Voltage

-0.3

-0.3

V

V

2.5V

D3

Hysteresis of Schmitt

Trigger inputs (SCIO)

0.05*Vcc

—

V

2.5V (Note 1)

D4

High-level Output

Voltage

—

—

V

V

A, Vcc = 2.5V

D5

Low-level Output

Voltage

—

—

0.4

0.4

V

V

A, Vcc = 2.5V

D6

Output Current Limit

(Note 2)

—

—

±4

±3

mA

mA

Vcc = 2.5V (Note 1)

D7

Input Leakage

Current (SCIO)

—±1

D8

Internal Capacitance

(all inputs and

outputs)

—7

pF

D9

Current

—

—

3

1

mA

mA

D10

Current

—

—

5

3

mA

mA

D11

Iccs

Standby Current

—

1

D12

Idle Mode Current

—

50

Note 1:

This parameter is periodically sampled and not 100% tested.

2: