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MMQA22VT3 数据表(PDF) 2 Page - ON Semiconductor

部件名 MMQA22VT3
功能描述  SC-74 Quad Monolithic Common Anode
PDF  6 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MMQA22VT3 数据表(HTML) 2 Page - ON Semiconductor

  MMQA22VT3 Datasheet HTML 1Page - ON Semiconductor MMQA22VT3 Datasheet HTML 2Page - ON Semiconductor MMQA22VT3 Datasheet HTML 3Page - ON Semiconductor MMQA22VT3 Datasheet HTML 4Page - ON Semiconductor MMQA22VT3 Datasheet HTML 5Page - ON Semiconductor MMQA22VT3 Datasheet HTML 6Page - ON Semiconductor  
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MMQA Quad Common Anode Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage
Max
Reverse
Leakage
Current
Max
Max
Reverse
Voltage @
IRSM
Maximum
Capacitance
@ 0 Volt
Bias, 1 MHz
VZT
(Note 5)
(V)
@ IZT
IR
VR
Max Zener
Impedance
(Note 7)
Max
Reverse
Surge
Current
IRSM
(Note 6)
(Clamping
Voltage)
Maximum
Temperature
Coefficient
of VZ
(pF)
Device
Min
Nom
Max
(mA)
(nA)
(V)
ZZT @ IZT
(
W) (mA)
IRSM
(A)
VRSM
(V)
(mV/
°C)
Min
Max
MMQA5V6T1,T3
5.32
5.6
5.88
1.0
2000
3.0
400
3.0
8.0
1.26
−
−
MMQA6V2T1,T3
5.89
6.2
6.51
1.0
700
4.0
300
2.66
9.0
10.6
−
−
MMQA6V8T1,T3
6.46
6.8
7.14
1.0
500
4.3
300
2.45
9.8
10.9
100
250
MMQA12VT1,T3
11.4
12
12.6
1.0
75
9.1
80
1.39
17.3
14
−
−
MMQA13VT1
12.4
13
13.7
1.0
75
9.8
80
1.29
18.6
15
−
−
MMQA15VT1,T3
14.3
15
15.8
1.0
75
11
80
1.1
21.7
16
−
−
MMQA18VT1,T3
17.1
18
18.9
1.0
75
14
80
0.923
26
19
−
−
MMQA20VT1,T3
19
20
21
1.0
75
15
80
0.84
28.6
20.1
−
−
MMQA21VT1,T3
20
21
22.1
1.0
75
16
80
0.792
30.3
21
−
−
MMQA22VT1,T3
20.9
22
23.1
1.0
75
17
80
0.758
31.7
22
−
−
MMQA24VT1,T3
22.8
24
25.2
1.0
75
18
100
0.694
34.6
25
−
−
MMQA27VT1,T3
25.7
27
28.4
1.0
75
21
125
0.615
39
28
−
−
MMQA30VT1,T3
28.5
30
31.5
1.0
75
23
150
0.554
43.3
32
−
−
MMQA33VT1,T3
31.4
33
34.7
1.0
75
25
200
0.504
48.6
37
−
−
1. Non-repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 4.
2. Non-repetitive current pulse per Figure 6 and derate above TA = 25°C per Figure 4.
3. FR-5 = 1.0 x 0.75 x 0.62 in.
4. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
5. VZ measured at pulse test current IT at an ambient temperature of 25°C.
6. Surge current waveform per Figure 5 and derate per Figure 4.
7. ZZT is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are IZ(AC) = 0.1 IZ(DC),
with AC frequency = 1 kHz.
TYPICAL CHARACTERISTICS
300
VZ, NOMINAL ZENER VOLTAGE (V)
250
200
150
100
50
0
5.6
6.8
12
20
27
BIASED AT 0 V
BIASED AT 1 V
BIASED AT 50%
OF VZ NOM
Figure 1. Typical Capacitance
5.6
6.8
20
27
10,000
1,000
100
10
0
Figure 2. Typical Leakage Current
VZ, NOMINAL ZENER VOLTAGE (V)
33
33
+150°C
+25°C
−40°C



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