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LP2998MA/NOPB 数据表(PDF) 16 Page - Texas Instruments |
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LP2998MA/NOPB 数据表(HTML) 16 Page - Texas Instruments |
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16 / 33 page ![]() VTT LP2998 PVIN VDDQ VREF AVIN VREF = 0.9V VSENSE GND + + + VDDQ = 1.8V AVIN = 3.3V or 5.5V VTT = 0.9V SD SD PVIN = 3.3V CIN COUT CREF VTT LP2998 PVIN VDDQ VREF AVIN VSENSE GND + + + SD SD 0.01 2F AVIN = 2.5V VDDQ = 1.8V VTT = 0.9V VREF = 0.9V 220 2F 47 2F LP2998, LP2998-Q1 SNVS521K – DECEMBER 2007 – REVISED AUGUST 2014 www.ti.com Typical Application (continued) 9.2.2 DDR-II Applications With the separate VDDQ pin and an internal resistor divider it is possible to use the LP2998 in applications utilizing DDR-II memory. Figure 21 and Figure 22 show several implementations of recommended circuits with output curves displayed in the Typical Characteristics. Figure 21 shows the recommended circuit configuration for DDR-II applications. The output stage is connected to the 1.8 V rail and the AVIN pin can be connected to either a 3.3 V or 5 V rail. Figure 21. Recommended DDR-II Termination If it is not desirable to use the 1.8 V rail it is possible to connect the output stage to a 3.3 V rail. Care should be taken to not exceed the maximum junction temperature as the thermal dissipation increases with lower VTT output voltages. For this reason it is not recommended to power PVIN off a rail higher than the nominal 3.3 V. The advantage of this configuration is that it has the ability to source and sink a higher maximum continuous current. Figure 22. DDR-II Termination with Higher Voltage Rails 9.2.3 SSTL-2 Applications For the majority of applications that implement the SSTL-2 termination scheme it is recommended to connect all the input rails to the 2.5 V rail. This provides an optimal trade-off between power dissipation and component count and selection. An example of this circuit can be seen in Figure 23. 16 Submit Documentation Feedback Copyright © 2007–2014, Texas Instruments Incorporated Product Folder Links: LP2998 LP2998-Q1 |
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