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BUV48C 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUV48C 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor BUV48C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 700 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 2mH; Vclamp= 1200V RBE= 10Ω 1200 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A 1.5 V VCE (sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 4A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 4A 2.0 V ICER Collector Cutoff Current VCE= 1200V; RBE= 10Ω VCE= 1200V; RBE= 10Ω; TC=125℃ 0.5 4.0 mA ICES Collector Cutoff Current VCE= 1200V; VBE= 0 VCE= 1200V; VBE= 0; TC=125℃ 0.5 3.0 mA ICEO Collector Cutoff Current VCE= 700V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA Switching times Resistive Load ton Turn-on Time IC= 6A; IB1=-IB2= 1.5A; VCC= 250V 1.0 μs ts Storage Time 3.0 μs tf Fall Time 0.7 μs |
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