BUX13 datasheet(1/2 Pages) ISC

部件名	BUX13

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon NPN Power Transistor

BUX13

DESCRIPTION

·Low Collector Saturation Voltage

·High Switching Speed

·High Current Current Capability

APPLICATIONS

·Power switching circuits

·Motor control

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

400

V

VCEX

Collector-Emitter Voltage

VBE= -1.5V

400

V

VCER

Collector-Emitter Voltage

RBE= 100Ω

390

V

VCEO

Collector-Emitter Voltage

325

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

15

A

ICM

Collector Current-Peak

20

A

IB

Base Current-Continuous

3

A

PC

Collector Power Dissipation

@TC=25℃

150

W

Tj

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.17

℃/W

类似零件编号 - BUX13

制造商	部件名	数据表	功能描述
Seme LAB	BUX13	14Kb / 1P	Bipolar NPN Device in a Bipolar NPN Device in a Metal Package
New Jersey Semi-Conduct...	BUX13	133Kb / 2P	Silicon NPN Power Transistor

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