1

3

2

PIN

10.2± 0.2

4.0± 0.3

2.6± 0.15

1.4± 0.1

0.6± 0.1

4.5± 0.2

3.1

+0.2

-0.1

2.6± 0.2

0.6± 0.1

FEATURES

MECHANICAL DATA

Position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unless otherwise specified.

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS Voltage

V

Maximum DC blocking voltage

V

Maximum average forw ard total device

A

Peak forw ard surge current 8.3ms single half

A

Maximum forward

)

voltage

(I

)

(Note 1)

(I

)

Maximum reverse current

@T

at rated DC blocking voltage

@T

Maximum thermal resistance (Note2)

/W

Operating junction temperature range

Storage temperature range

2. Thermal resistance from junction to case.

m A

30

35

40

45

50

60

80

100

30

150

21

25

28

32

35

42

56

70

30

35

40

45

50

60

80

100

VOLTAGE RANGE: 30 - 100 V

CURRENT: 30 A

Metal silicon junction, m ajority carrier conduction.

Case:JEDEC ITO-220AB,m olded plastic body

SCHOTTKY BARRIER RECTIFIERS

High current capacity, low forward voltage drop.

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

-

55 ---- + 150

-

55 ---- + 150

Term inals:Leads, solderable per MIL-STD-750,

1 1

Method 2026

0.2

1.0

1.5

ITO-220AB

MBRF2530CT---MBRF25100CT

MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF

25

30CT 2535CT 2540CT 2545CT 2550CT 2560CT 2580CT 25100CT

Guard ring for over voltage protection.

High surge capacity.

For use in low voltage, high frequency inverters, free

Polarity: As m arked

Weight: 0.08ounce, 2.24 grams

40

50

V

-

0.82

0.75

0.85

0.65

-

-

-

-

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

Dimensions in millimeters

)

0.73

-

-

Diode Semiconductor Korea

www.diode.kr