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MBRF3045CT 数据表(PDF) 1 Page - Diode Semiconductor Korea

部件名 MBRF3045CT
功能描述  SCHOTTKY BARRIER RECTIFIERS
PDF  2 Pages
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制造商  DSK [Diode Semiconductor Korea]
网页  http://www.diode.kr/
标志 DSK - Diode Semiconductor Korea

MBRF3045CT 数据表(HTML) 1 Page - Diode Semiconductor Korea

  MBRF3045CT Datasheet HTML 1Page - Diode Semiconductor Korea MBRF3045CT Datasheet HTML 2Page - Diode Semiconductor Korea  
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background image
1
3
2
PIN
10.2± 0.2
4.0± 0.3
2.6± 0.15
1.4± 0.1
0.6± 0.1
4.5± 0.2
3.1
+0.2
-0.1
2.6± 0.2
0.6± 0.1
FEATURES
MECHANICAL DATA
Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unless otherwise specified.
UNITS
Maximum recurrent peak reverse voltage
VRRM
V
Maximum RMS Voltage
VRMS
V
Maximum DC blocking voltage
VDC
V
Maximum average forw ard total device
m rectified current @T
C = 105°C
IF(AV)
A
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
IFSM
A
Maximum forward
(IF=15A,TC=25
)
(IF=15A,TC=125
)
voltage
(IF=30A,TC=25
)
(Note 1)
(I F=30A,TC=125 )
Maximum reverse current
@T
C=25
at rated DC blocking voltage
@T
C=125
Maximum thermal resistance (Note2)
R θJC
/W
Operating junction temperature range
TJ
Storage temperature range
TSTG
2. Thermal resistance from junction to case.
m A
30
35
40
45
50
60
80
100
3
0
200
21
25
28
32
35
42
56
70
30
35
40
45
50
60
80
100
VOLTAGE RANGE: 30 - 100 V
CURRENT: 30 A
Metal silicon junction, m ajority carrier conduction.
Case:JEDEC ITO-220AB,m olded plastic body
SCHOTTKY BARRIER RECTIFIERS
High current capacity, low forward voltage drop.
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
-
55 ---- + 150
-
55 ---- + 150
Term inals:Solderable per MIL-STD-750,
1 1
Method 2026
IR
VF
1.0
0.2
6.8
4.4
ITO-220AB
MBRF3030CT---MBRF30100CT
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
3
030CT 3035CT 3040CT 3045CT 3050CT 3060CT 3080CT 30100CT
Guard ring for over voltage protection.
High surge capacity.
For use in low voltage, high frequency inverters, free
111wheeling, and polarity protection applications.
Polarity: As m arked
Weight: 0.08ounce, 2.24 grams
60
40
V
0.57
0.70
0.65
-
0.80
0.85
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
Dimensions in millimeters
0.84
0.95
0.95
0.72
0.85
0.75
Diode Semiconductor Korea
www.diode.kr


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