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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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LLDB3 数据表(PDF) 1 Page - Diode Semiconductor Korea |
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LLDB3 数据表(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page  FEATURES ABSOLUTE RATINGS Power dissipation on printed TA=50 oC circuit (L=10mm) Pc mW Repetitive peak on-state tp=20 S current f=120Hz ITRM A Operating junction temperature TJ oC Storage temperature TSTG oC Min 28 35 Typ 32 40 Max 36 45 Output voltage (NOTE 1) Vo Min V Breakover current (NOTE 1) IBO Max A Rise time (NOTE 1) tr Typ S Leakage current (NOTE 1) IR Max A 2. Connected in parallel w ith the devices NOTE: 1. Electrical characteristics applicable in both forw ard and reverse dirctions. 5.0 5.0 100.0 1.5 V R=0.5 VBO See FIG.1 10.0 C=22nf(NOTE 2) Breakover voltage (NOTE 1) Breakover voltage symmetry Dynamic breakover voltage (NOTE 1) VBO UNITS 150.0 I+VBO I- I-VBOI I± VI C=22nf(NOTE 2) See FIG.1 I=(IBO to IF=10mA) See FIG.1 V V ±3.0 V Parameters Symbols UNITS LLDB3,LLDB4 VOLTAGE RANGE: 28-45 V SILICON BIDIRECTIONAL DIACS The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse 1111current,The breakover symmetry is within three 1111volts(LLDB3,LLDB4). These diacs are intended for use in CCC thyrisitors phase control,circuits for lamp dimming, FFFI universal motor speed control,and heat control. Parameters See FIG.3 2.0 -40--- +125 C=22nf(NOTE 2) See FIG.1 ELECTRICAL CHARACTERISTICS Test Conditions -40--- +125 LLDB3 LLDB4 See FIG.2 Max Min Diode Semiconductor Korea www.diode.kr 3.4 +0.3 -0.1 0.4±0.1 Cathode indification MINI-MELF Dimensions in millimeters LLDB3.LLDB4 |
类似零件编号 - LLDB3 |
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类似说明 - LLDB3 |
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