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ER3JB 数据表(PDF) 1 Page - Diode Semiconductor Korea |
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ER3JB 数据表(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page ![]() 4 . 5± 0.1 5 1.25± 0.2 0.2± 0.05 5 . 3± 0.2 FEATURES Low cost Low leakage Low forward voltage drop High current capability MECHANICAL DATA Case:JEDEC DO-214AA,molded plastic Terminals: Solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.003 ounces,0.093 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ER3B B ER3CB ER3DB ER3EB ER3GB ER3JB UNITS Maximum recurrent peak reverse voltage VRRM 100 150 200 300 400 600 V Maximum RMS voltage VRMS 70 105 140 210 280 420 V Maximum DC blocking voltage VDC 100 150 200 300 400 600 V Maximum average forw ard rectified current @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 3.0A VF 1.7 V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=125 Maximum reverse recovery time (Note 1) trr ns Typical junction capacitance (Note 2) CJ pF Typical thermal resistance (Note 3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG 1.25 DO - 214AA(SMB) 3.Thermal resistance junction to ambient. A 10 0 IR IFSM NOTE: 1. Measured with I F=0.5A, IR=1A, Irr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. A - 55 ----- + 150 ER3AB--- ER3JB A 5.0 Easily cleaned with alcohol,Isopropanol and similar solvents IF(AV) 3 .0 SURFACE MOUNT RECTIFIERS ER3A B 50 35 - 55 ----- + 150 40 35 95 300 50 0.95 The plastic material carries U/L recognition 94V-0 VOLTAGE RANGE: 50 --- 600 V CURRENT: 3.0 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
类似零件编号 - ER3JB |
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