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DF06M 数据表(PDF) 1 Page - Diode Semiconductor Korea |
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DF06M 数据表(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page ![]() 1± 0.1 8.3± 0.1 5± 0.2 DF005M---DF10M FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability. Reliable low cost construction utilizing molded plastic technique results in inexpensive product The plastic material has UL flammability classification 94V-0 MECHANICAL DATA Polarity : As marked on Body Weight : 0.02 ounces, 0.38 grams Mounting position : Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Thermal resistance from junction to ambient mounted on P.C.B with 0.5x0.5"(13x13mm) copper pads. DF10M DF08M DF06M DF04M DF02M DF005M DF01M UNIT CHARACTERISTICS SYMBOL 1000 700 1000 800 560 800 600 420 600 400 280 400 200 140 200 50 35 50 100 70 100 VRMS VDC VRRM I(AV) IFSM VF @TA =40 C Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum forward Voltage at 1.0A DC 1.0 50 1.1 TJ Operating Temperature Range -55 to +150 C TSTG Storage Temperature Range -55 to +150 C Typical Thermal Resistance (Note 2) R0JA 40 C/W IR Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ =125 C @TJ =25 C 10 500 uA V A A V V V 10.4 A S 2 I t 2 I t Rating for fusing (t < 8.3ms) 2 CJ 25 pF Typical Junction Capacitance per element (Note 1) DB-1 GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Amperes Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
类似零件编号 - DF06M |
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类似说明 - DF06M |
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