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DF06S 数据表(PDF) 1 Page - Diode Semiconductor Korea |
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DF06S 数据表(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page ![]() 1.2± 0.3 1.2± 0.1 8.3± 0.1 5± 0.2 6.4± 0.1 7.9± 0.2 10± 0.6 DF005S---DF10S FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop high current capability. Reliable low cost construction utilizing molded plastic technique results in inexpensive product The plastic material has UL flammability classification 94V-0 UL recognized file MECHANICAL DATA Polarity :As marked on Body Weight : 0.016 ounces,0.45 grams Mounting position : Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% DF-S DF10S DF08S DF06S DF04S DF02S DF005S DF01S CHARACTERISTICS SYMBOL 1000 700 1000 800 560 800 600 420 600 400 280 400 200 140 200 50 35 50 100 70 100 VRMS VDC VRRM IF(AV) IFSM V F @TA =40 C Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum forward Voltage at 1.0A DC 1.0 50 1.1 TJ Operating Temperature Range -55 to +150 C TSTG Storage Temperature Range -55 to +150 C Typical Thermal Resistance (Note 2) R0JA 40 C/W IR Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ =125 C @TJ =25 C 10 500 µ A V A A V UNIT V V 10.4 A S 2 I t 2 I t Rating for fusing (t < 8.3ms) 2 CJ 25 pF Typical Junction Capacitance per element (Note 1) NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Thermal resistance from junction to ambient mounted on P.C.B with 0.5x0.5"(13x13mm) copper pads. SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Amperes Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
类似零件编号 - DF06S |
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类似说明 - DF06S |
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