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BAS70T 数据表(PDF) 2 Page - Diode Semiconductor Korea

部件名 BAS70T
功能描述  Surface Mount Schottky Barrier Diode
PDF  3 Pages
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制造商  DSK [Diode Semiconductor Korea]
网页  http://www.diode.kr/
标志 DSK - Diode Semiconductor Korea

BAS70T 数据表(HTML) 2 Page - Diode Semiconductor Korea

  BAS70T Datasheet HTML 1Page - Diode Semiconductor Korea BAS70T Datasheet HTML 2Page - Diode Semiconductor Korea BAS70T Datasheet HTML 3Page - Diode Semiconductor Korea  
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Surface Mount Schottky Barrier Diode BAS70T/-04T/-05T/-06T
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse breakdown voltage
V(BR)R
IR=10μA
70
V
Leakage current
IR
VR=50V,tp<300μs
100
nA
Forward voltage
VF
IF=1.0mA,tp<300μS
IF=15mA,tp<300μS
410
1000
mV
Typical total capacitance
CT
VR=0V,f=1MHz
2.0
pF
Reverse recovery Time
trr
IF=IR=10mA,Irr=0.1*IR,RL=100Ω
5.0
ns
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
www.diode.kr
Diode Semiconductor Korea



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