A42 datasheet(2/4 Pages) BWTECH

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A42

NPN Plastic-Encapsulate Transistors

Publication Order Number: [A42]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute maximum ratings (Ta=25°C)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

310

VCEO

Collector-Emitter Voltage

305

VEBO

Emitter-Base Voltage

Collector Current -Continuous

200

ICM

Collector Current - Pulsed

500

Collector Power Dissipation

500

RθJA

Thermal Resistance from Junction to Ambient

250

°C/W

Junction Temperature

150

°C

Tstg

Storage Temperature

-55 to +150

°C

ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

MIN

TYP

MAX

UNIT

BVCBO

Collector-base breakdown voltage

IC = 100μA , IE = 0

310

BVCEO

Collector-emitter breakdown voltage

IC = 1 mA , IB = 0

305

BVEBO

Emitter-base breakdown voltage

IE = 100μA , IC = 0

ICBO

Collector cut-off current

VCB = 200 V , IE = 0

0.25

μA

ICEO

Collector cut-off current

VCB = 300 V , IB = 0

0.25

μA

VCB = 300 V , IB = 0

μA

IEBO

Emitter cut-off current

VEB = 5 V , IC = 0

0.1

μA

hFE(1)

DC current gain

VCE = 10 V , IC = 1 mA

hFE(2)

VCE = 10 V , IC = 10 mA

100

300

hFE(3)

VCE = 10 V , IC = 30 mA

VCE(sat)

Collector-emitter saturation voltage

IC = 20 mA , IB = 2 mA

0.2

VBE(sat)

Base-emitter saturation voltage

IC = 20 mA , IB = 2 mA

0.9

Transition frequency

VCE = 20 V , IE = 10 mA

f = 30MHz

MHz

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