2SC5585 datasheet(1/3 Pages) ROHM

部件名	2SC5585

功能描述	Low frequency transistor (12V, 0.5A)

PDF	3 Pages

Scroll/Zoom	100%

制造商	ROHM [Rohm]

网页	http://www.rohm.com

标志

1 / 3 page

2SC5585 / 2SC5663

Transistors

Rev.B

1/2

Low frequency transistor (12V, 0.5A)

2SC5585 / 2SC5663

The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.

Applications

For switching

For muting

Features

1) High current.

2) Low VCE(sat).

VCE(sat)

≤ 250mV at IC = 200mA / IB = 10mA

External dimensions (Unit : mm)

ROHM : EMT3

EIAJ : SC-75A

JEDEC : SOT-416

2SC5585

Abbreviated symbol : BX

ROHM : VMT3

2SC5663

(1) Base

(2) Emitter

(3) Collector

(1) Emitter

(2) Base

(3) Collector

0.1Min.

1.6

0.8

(2)

(3)

(1)

(3)

1.2

0.8

0.2

0.15Max.

0.2

(2)

(1)

Absolute maximum ratings (Ta=25

°C)

Parameter

Collectot-base voltage

Collector-emitter voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

VCBO

VCEO

IC

PC

Tj

Tstg

15

V

mA

mW

°C

12

Emitter-base voltage

VEBO

V

6

500

ICP

A

1

∗

150

−55 to +150

Symbol

Limits

Unit

∗ Single pulse Pw = 1ms

Electrical characteristics (Ta=25

°C)

Parameter

Collector-base breakdown voltage

Collectoe-emitter brakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance

Symbol

BVCBO

BVCEO

BVEBO

ICBO

hFE

VCE(sat)

Cob

Min.

15

12

6

−

270

−

90

7.5

−

100

680

250

−

VIC = 10

µA

IC = 1mA

IE = 10

µA

VCB = 15V

VCE = 2V, IC = 10mA

IC = 200mA, IB = 10mA

VCB = 10V, IE = 0A, f = 1MHz

V

nA

Emitter cutoff current

IEBO

−−

100

VCB = 6V

nA

−

mV

fT

−

320

−

VCE = 2V, IE =

−10mA, f = 100MHz

MHz

pF

Typ.

Max.

Unit

Conditions

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