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MCP1402T-E/OT 数据表(PDF) 10 Page - Microchip Technology |
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MCP1402T-E/OT 数据表(HTML) 10 Page - Microchip Technology |
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10 / 20 page ![]() MCP1401/02 DS20002052D-page 10 2007-2014 Microchip Technology Inc. 4.0 APPLICATION INFORMATION 4.1 General Information MOSFET drivers are high-speed, high-current devices which are intended to source/sink high peak currents to charge/discharge the gate capacitance of external MOSFETs or IGBTs. In high-frequency switching power supplies, the PWM controller may not have the drive capability to directly drive the power MOSFET. A MOSFET driver like the MCP1401/02 family can be used to provide additional source/sink current capability. 4.2 MOSFET Driver Timing The ability of a MOSFET driver to transition from a fully- off state to a fully-on state is characterized by the driver’s rise time (tR), fall time (tF), and propagation delays (tD1 and tD2). The MCP1401/02 family of drivers can typically charge and discharge a 470 pF load capacitance in 19 ns, along with a typical matched propagation delay of 35 ns. Figures 4-1 and 4-2 show the test circuit and timing waveform used to verify the MCP1401/02 timing. FIGURE 4-1: Inverting Driver Timing Waveform. FIGURE 4-2: Non-Inverting Driver Timing Waveform. 4.3 Decoupling Capacitors Careful layout and decoupling capacitors are highly recommended when using MOSFET drivers. Large currents are required to charge and discharge capacitive loads quickly. For example, approximately 550 mA are needed to charge a 470 pF load with 18V in 15 ns. To operate the MOSFET driver over a wide frequency range with low supply impedance, it is recommended to place a ceramic and low ESR film capacitor in parallel between the driver VDD and GND. A 1.0 µF low ESR film capacitor and a 0.1 µF ceramic capacitor placed between pins 2 and 1 should be used. These capacitors should be placed close to the driver to minimize circuit board parasitics and provide a local source for the required current. 4.4 PCB Layout Considerations Proper Printed Circuit Board (PCB) layout is important in a high-current, fast switching circuit to provide proper device operation and robustness of design. PCB trace loop area and inductance should be minimized by the use of ground planes or trace under MOSFET gate drive signals, separate analog and power grounds, and local driver decoupling. Placing a ground plane beneath the MCP1401/02 will help as a radiated noise shield and it will provide some heat sinking for power dissipated within the device. 0.1 µF +5V 10% 90% 10% 90% 10% 90% 18V 1µF 0V 0V MCP1401 CL = 470 pF Input Input Output tD1 tF tD2 Output tR VDD =18V Ceramic 90% Input tD1 tF tD2 Output tR 10% 10% 10% +5V 18V 0V 0V 90% 90% 0.1 µF 1µF MCP1402 CL = 470 pF Input Output VDD =18V Ceramic |
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