MS23P19Z

20V P-Channel MOSFETs

Publication Order Number: [MS23P19Z]

Description

These P-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

Features

• -20V,-

250mA, RDS(ON) =650mΩ@VGS = -4.5V

• Improved dv/dt capability

• Fast switching

• Green Device Available

• Suit for -1.5V Gate Drive Applications

• RoHS compliant package

Application

• Notebook

• Load Switch

• Battery Protection

• Hand-held Instruments

Packing & Order Information

50/Tube ; 1,000/Box

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