IRF8113 datasheet(1/10 Pages) IRF

部件名	IRF8113

功能描述	Power MOSFET

PDF	10 Pages

Scroll/Zoom	100%

制造商	IRF [International Rectifier]

网页	http://www.irf.com

标志

1 / 10 page

www.irf.com

1

1/5/04

IRF8113

HEXFET® Power MOSFET

Notes

through are on page 10

Benefits

l Very Low RDS(on) at 4.5V VGS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

Applications

l Synchronous MOSFET for Notebook

Processor Power

l Synchronous Rectifier MOSFET for

Isolated DC-DC Converters in Networking

Systems

Top View

8

1

2

3

4

5

6

7

D

G

S

A

S

A

SO-8

Absolute Maximum Ratings

Parameter

Units

VDS

Drain-to-Source Voltage

V

VGS

Gate-to-Source Voltage

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

A

IDM

Pulsed Drain Current

c

PD @TA = 25°C

Power Dissipation

f

W

PD @TA = 70°C

Power Dissipation

f

Linear Derating Factor

W/°C

TJ

Operating Junction and

°C

TSTG

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJL

Junction-to-Drain Lead

g

–––

20

°C/W

RθJA

Junction-to-Ambient

fg

–––

50

Max.

17.2

13.8

135

± 20

30

-55 to + 150

2.5

0.02

1.6

VDSS

RDS(on) max

Qg Typ.

30V

5.6m

:@V

GS = 10V

24nC

PD - 94637A

类似零件编号 - IRF8113

制造商	部件名	数据表	功能描述
International Rectifier	IRF8113	1Mb / 15P	IRU3146 EVALUATION BOARD USER GUIDE
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	IRF8113PBF	218Kb / 10P	HEXFET짰Power MOSFET
	IRF8113PBF	224Kb / 10P	Synchronous MOSFET for Notebook Processor Power

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