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DS89C21 数据表(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
部件名 DS89C21
功能描述  Differential CMOS Line Driver and Receiver Pair
PDF  6 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

DS89C21 数据表(HTML) 2 Page - National Semiconductor (TI)

  DS89C21 Datasheet HTML 1Page - National Semiconductor (TI) DS89C21 Datasheet HTML 2Page - National Semiconductor (TI) DS89C21 Datasheet HTML 3Page - National Semiconductor (TI) DS89C21 Datasheet HTML 4Page - National Semiconductor (TI) DS89C21 Datasheet HTML 5Page - National Semiconductor (TI) DS89C21 Datasheet HTML 6Page - National Semiconductor (TI)  
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)7V
Driver Input Voltage (DI)
−1.5V to V
CC + 1.5V
Driver Output Voltage (DO,
DO
*
)
−0.5V to +7V
Receiver Input Voltage — V
CM
(RI, RI
*)
±14V
Differential Receiver Input
±14V
Voltage — V
DIFF (RI, RI
*)
Receiver Output Voltage
(RO)
−0.5V to V
CC +0.5V
Receiver Output Current
(RO)
±25 mA
Storage Temperature Range
(T
STG)
−65˚C to +150˚C
Lead Temperature (T
L)
+260˚C
(Soldering 4 sec.)
Maximum Junction
Temperature
150˚C
Maximum Package Power Dissipation @+25˚C
M Package
714 mW
Derate M Package
5.7 mW/˚C above
+25˚C
Recommended Operating
Conditions
Min
Max
Units
Supply Voltage (V
CC)
4.50
5.50
V
Operating Temperature (T
A)
−40
+85
˚C
Input Rise or Fall Time (DI)
500
ns
Electrical Characteristics (Notes 2, 3)
Over recommended supply voltage and operating temperature ranges, unless otherwise specified.
Symbol
Parameter
Conditions
Pin
Min
Typ
Max
Units
DRIVER CHARACTERISTICS
V
IH
Input Voltage HIGH
2.0
V
CC
V
V
IL
Input Voltage LOW
DI
GND
0.8
V
I
IH,IIL
Input Current
V
IN = VCC, GND, 2.0V, 0.8V
0.05
±10
µA
V
CL
Input Clamp Voltage
I
IN = −18 mA
−1.5
V
V
OD1
Unloaded Output Voltage
No Load
DO,
DO*
4.2
6.0
V
V
OD2
Differential Output Voltage
R
L = 100Ω
2.0
3.0
V
∆V
OD2
Change in Magnitude of V
OD2
5.0
400
mV
for Complementary Output States
V
OD3
Differential Output Voltage
R
L = 150Ω
2.1
3.1
V
V
OD4
Differential Output Voltage
R
L = 3.9 kΩ
4.0
6.0
V
V
OC
Common Mode Voltage
R
L = 100Ω
2.0
3.0
V
∆V
OC
Change in Magnitude of V
OC
2.0
400
mV
for Complementary Output States
I
OSD
Output Short Circuit Current
V
OUT = 0V
−30
−115
−150
mA
I
OFF
Output Leakage Current
V
CC = 0V
V
OUT = +6V
0.03
+100
µA
V
OUT = −0.25V
−0.08
−100
µA
RECEIVER CHARACTERISTICS
V
TL,VTH
Differential Thresholds
V
IN = +7V, 0V, −7V
RI,
RI*
−200
±25
+200
mV
V
HYS
Hysteresis
V
CM = 0V
20
50
mV
R
IN
Input Impedance
V
IN = −7V, +7V, Other = 0V
5.0
9.5
k
Ω
I
IN
Input Current
Other Input = 0V,
V
IN = +10V
+1.0
+1.5
mA
V
CC = 5.5V and
V
IN = +3.0V
0
+0.22
mA
V
CC = 0V
V
IN = +0.5V
−0.04
mA
V
IN = −3V
0
−0.41
mA
V
IN = −10V
−1.25
−2.5
mA
V
OH
Output HIGH Voltage
I
OH = −6 mA
V
DIFF = +1V
RO
3.8
4.9
V
V
DIFF = OPEN
3.8
4.9
V
V
OL
Output LOW Voltage
I
OL = +6 mA, VDIFF = −1V
0.08
0.3
V
I
OSR
Output Short Circuit Current
V
OUT = 0V
−25
−85
−150
mA
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