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OPA693IDBVT 数据表(PDF) 3 Page - Texas Instruments |
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OPA693IDBVT 数据表(HTML) 3 Page - Texas Instruments |
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3 / 32 page  OPA693 3 SBOS285A www.ti.com ELECTRICAL CHARACTERISTICS: V S = ±5V Boldface limits are tested at 25 °C. G = +2 (–IN grounded) and RL = 100Ω (see Figure 1 for AC performance only), unless otherwise noted. OPA693ID, IDBV TYP MIN/MAX OVER TEMPERATURE(1) 0 °C to –40 °C to MIN/ TEST PARAMETER CONDITIONS +25 °C +25 °C70°C +85 °C UNITS MAX LEVEL(2 ) AC PERFORMANCE (see Figure 1) Small-Signal Bandwidth (VO < 1.0VPP) G = +1 1400 MHz typ C G = +2 700 510 490 480 MHz min B G = –1 700 510 490 480 MHz typ C Bandwidth for 0.2dB Gain Flatness G = +2, VO < 1.0VPP, RL = 150Ω 400 122 112 108 MHz min B Peaking at a Gain of +1 VO < 1.0VPP 2.5 3.8 4.8 5.2 dB max B Large-Signal Bandwidth G = +2, VO = 4VPP 400 MHz typ C Slew Rate G = +2, 4V Step 2500 2200 2100 2000 V/ µsmin B Rise-and-Fall Time G = +2, VO = 0.5V Step 0.6 0.8 0.8 0.8 ns max B G = +2, VO = 5V Step 1.2 1.3 1.3 1.4 ns max B Settling Time to 0.02% G = +2, VO = 2V Step 16 ns typ C Settling Time to 0.1% G = +2, VO = 2V Step 12 ns typ C Harmonic Distortion G = +2, f = 10MHz, VO = 2VPP 2nd-Harmonic RL = 100Ω –69 –66 –65 –64 dBc max B RL ≥ 500Ω –82 –80 –79 –78 dBc max B 3rd-Harmonic RL = 100Ω –83 –80 –70 –69 dBc max B RL ≥ 500Ω –96 –86 –85 –82 dBc max B Input Voltage Noise f > 1MHz 1.8 2 2.7 2.9 nV/ √Hz max B Noninverting Input Current Noise f > 1MHz 18 19 21 22 pA/ √Hz max B Inverting Input Current Noise (internal) f > 1MHz 22 24 26 27 pA/ √Hz max B Differential Gain NTSC, RL = 150Ω 0.03 % typ C NTSC, RL = 37.5Ω 0.03 % typ C Differential Phase NTSC, RL = 150Ω 0.01 deg typ C NTSC, RL = 37.5Ω 0.1 deg typ C DC PERFORMANCE(3) Gain Error G = +1 ±0.2 % typ C G = +2 ±0.3 ±0.9 ±1.0 ±1.1 % max A G = –1, RS = 0Ω±0.2 ±0.8 ±0.9 ±1.0 % max B DC Linearity VO = ±2, RL = 100Ω, G = +2 0.0016 % typ C Internal RF and RG Maximum 300 341 345 346 Ω max A Minimum 300 264 260 259 Ω min A Average Drift 0.03 0.03 %/C ° max B Input Offset Voltage VCM = 0V ±0.3 ±2.0 ±2.3 ±2.5 mV max A Average Offset Voltage Drift VCM = 0V ±5 ±8 µV/°Cmax B Noninverting Input Bias Current VCM = 0V +15 ±35 ±43 ±45 µAmax A Average Noninverting Input Bias Current Drift VCM = 0V 170 170 nA/ °Cmax B Inverting Input Bias Current (internal) VCM = 0V ±20 ±50 ±52 ±54 µAmax A Average Inverting Input Bias Current Drift VCM = 0V 50 60 nA °Cmax B INPUT Common-Mode Input Range ±3.4 ±3.3 ±3.2 ±3.2 V min B Noninverting Input Impedance 300 || 1.2 k Ω || pF typ C OUTPUT Voltage Output Swing No Load ±4.1 ±3.9 ±3.9 ±3.8 V min A 100 Ω Load ±3.8 ±3.7 ±3.7 ±3.6 V min A Current Output, Sourcing +120 +90 +80 +70 mA min A Current Output, Sinking –120 –90 –80 –70 mA min A Closed-Loop Output Impedance G = +2, f = 100kHz 0.18 Ω typ C (1) Junction temperature = ambient temperature for low temperature limit and +25 °C specifications. Junction temperature = ambient temperature +20°C at high temperature limit specifications. (2) Test Levels: (A) 100% tested at +25 °C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (3) Current is considered positive out-of-node. VCM is the input common-mode voltage. |
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