BUL1203 datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.25

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 1200 V

100

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 550 V

100

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

L = 25 mH

550

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 10 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 1 A

IB = 0.2 A

IC = 2 A

IB = 0.4 A

IC = 3 A

IB = 1 A

0.5

0.7

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 2 A

IB = 0.4 A

IC = 3 A

IB = 1 A

1.5

hFE

∗

DC Current Gain

IC = 1 mA

VCE = 5 V

IC = 10 mA

VCE = 5 V

IC = 0.8 A

VCE = 3 V

IC = 2 A

VCE = 5 V

ton

RESISTIVE LOAD

Turn-on Time

Storage Time

Fall Time

IC = 2 A

IB1 = 0.4 A

IB2 = -0.8 A

tp = 30

µs

VCC = 150 V

(see figure 2)

2.5

0.2

0.5

3.0

0.3

µs

Ear

Repetitive Avalanche

Energy

L = 2 mH

C = 1.8 nF

VCC = 50 V

VBE = -5 V

(see figure 3)

6mJ

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Derating Curve

BUL1203E

2/7

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