IPS021L

2

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(1) Limited by junction temperature (pulsed current limited also by internal wiring)

(2) Operations at higher switching frequencies is possible. See Appl. notes.

Recommended Operating Conditions

These values are given for a quick design. For operation outside these conditions, please consult the application notes.

Symbol Parameter

Min.

Max.

Units

Vds (max) Continuous drain to source voltage

—

35

VIH

High level input voltage

4

6

VIL

Low level input voltage

0

0.5

Ids

Continuous drain current

Tamb=85

—

1.4

A

Rin

Recommended resistor in series with IN pin

0.5

5

k

Ω

Tr-in (max) Max recommended rise time for IN signal (see fig. 2)

—

1

µS

Max. frequency in short circuit condition (Vcc = 14V)

0

1

kHz

V

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-

erenced to SOURCE lead. (TAmbient = 25

µm

copper thickness..

Symbol Parameter

Min.

Max.

Units

Test Conditions

Vds

Maximum drain to source voltage

—

47

Vin

Maximum Input voltage

-0.3

7

Iin, max

Maximum IN current

-10

+10

mA

—

1.4

—10

Pd

Maximum power dissipation

(1)

—

1

W

ESD1

—

4

C=100pF, R=1500

Ω,

ESD2

—

0.5

C=200pF, R=0

Ω, L=10µH

T stor.

Max. storage temperature

-55

150

Tj max.

Max. junction temperature

-40

+150

A

kV

Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Thermal resistance with standard footprint

—

100

—

Thermal resistance with 1" square footprint

—

50

—

Thermal Characteristics

V