DMNH6021SPD

Document number: DS37392 Rev. 3 - 2

4 of 7

www.diodes.com

June 2016

© Diodes Incorporated

DMNH6021SPD

0

5

10

15

20

25

30

35

40

-50

-25

0

25

50

75

100

125

150

175

V

= 4.5V

GS

I = 12A

D

V

= 10V

GS

I

= 12A

D

T , JUNCTION TEMPERATURE ( C)

J



Figure 7 On-Resistance Variation with Temperature

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

-50 -25

0

25

50

75

100 125

150 175

I = 1mA

D

I = 250µA

D

T , JUNCTION TEMPERATURE ( C)

J



Figure 8 Gate Threshold Variation vs. Ambient Temperature

1

8

15

22

29

36

43

50

0

0.3

0.6

0.9

1.2

1.5

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 175°C

A

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

10

100

1000

10000

0

5 10 15

20 25 30 35 40

45 50

55 60

f=1MHz

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

0

2

4

6

8

10

0

2

4

6

8

10

12

14

16

18

20

V

= 30V

DS

I

= 20A

D

Q , TOTAL GATE CHARGE (nC)

g

Figure 11 Gate Charge

0.1

1

10

100

0.1

1

10

100

Limited

DC

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 10µs

W

T

= 175°C

J (m ax )

T = 25°C

C

V

= 10V

GS

Single Pulse

DUT on Infinite Heatsink

P

= 1µs

W

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area