DMNH6022SSD datasheet(2/7 Pages) DIODES

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DMNH6022SSD

Document number: DS37865 Rev. 5 - 2

2 of 7

www.diodes.com

August 2016

DMNH6022SSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current VGS = 10V (Note 6)

TC = +25°C

TC = +100°C

22.6

16.0

TA = +25°C

TA = +70°C

7.1

5.9

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

Maximum Continuous Body Diode Forward Current (Note 6)

Avalanche Current L=0.1mL (Note 7)

IAS

Avalanche Energy L=0.1mL (Note 7)

EAS

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

1.5

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

104

°C/W

t<10s

Total Power Dissipation (Note 6)

TA = +25°C

2.1

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

RθJC

7.25

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.0

—

3.0

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

Ω

VGS = 10V, ID = 5A

VGS = 6V, ID = 5A

Diode Forward Voltage

VSD

—

0.8

1.2

VGS = 0V, IS = 1.7A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

2127

—

VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

Reverse Transfer Capacitance

Crss

—

Gate Resistance

—

2.0

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge at (VGS = 10V)

—

VDS = 30V, ID = 6A

Total Gate Charge at (VGS = 4.5V)

—

Gate-Source Charge

Qgs

—

Gate-Drain Charge

Qgd

—

Turn-On Delay Time

tD(ON)

—

5.4

—

VGS = 10V, VDS = 30V,

Rg = 6Ω, ID = 1A

Turn-On Rise Time

—

4.4

—

Turn-Off Delay Time

tD(OFF)

—

30.4

—

Turn-Off Fall Time

—

8.4

—

Body Diode Reverse Recovery Time

tRR

—



18.1

—



IF = 1.7A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—



12.5

—



IF = 1.7A, di/dt = 100A/μs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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