NCP1253_14 datasheet(4/15 Pages) ONSEMI

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NCP1253

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MAXIMUM RATINGS TABLE

Symbol

Rating

Value

Unit

VCC

Power Supply voltage, Vcc pin, continuous voltage

Maximum voltage on low power pins CS, and FB

−0.3 to 10

RqJ−A

Thermal Resistance Junction−to−Air

360

°C/W

TJ,max

Maximum Junction Temperature

150

°C

Storage Temperature Range

−60 to +150

°C

ESD Capability, Human Body Model, all pins

ESD Capability, Machine Model

200

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per JESD22, Method A114E.

Machine Model Method 200 V per JESD22, Method A115A.

2. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78.

ELECTRICAL CHARACTERISTICS

(For typical values TJ = 25°C, for min/max values TJ = −40°C to +125°C, Max TJ = 150°C, VCC = 12 V unless otherwise noted)

Symbol

Rating

Min

Typ

Max

Unit

VCCON

VCC increasing level at which driving pulses are authorized

VCC(min)

VCC decreasing level at which driving pulses are stopped

8.2

8.8

9.4

VCCHYST

Hysteresis VCCON−VCC(min)

−

VZENER

Clamped VCC when latched off @ ICC = 500 mA

−

ICC1

Start−up current

−

ICC2

Internal IC consumption with IFB = 50 mA, FSW = 65 kHz and CL = 0

−

1.4

2.2

ICC3

Internal IC consumption with IFB = 50 mA, FSW = 65 kHz and CL = 1 nF

−

2.1

3.0

ICC2

Internal IC consumption with IFB = 50 mA, FSW = 100 kHz and CL = 0

−

1.7

2.5

ICC3

Internal IC consumption with IFB = 50 mA, FSW = 100 kHz and CL = 1 nF

−

3.1

4.0

ICCstby

Internal IC consumption while in skip mode (VCC = 12 V, driving a typical

6 A/600 V MOSFET)

550

ICCLATCH

Current flowing into VCC pin that keeps the controller latched –

TJ = 0 to 125°C

ICCLATCH

Current flowing into VCC pin that keeps the controller latched –

TJ = −40°C to 125°C

DRIVE OUTPUT

Output voltage rise−time @ CL = 1 nF, 10−90% of output signal

−

Output voltage fall−time @ CL = 1 nF, 10−90% of output signal

−

ROH

Source resistance

−

ROL

Sink resistance

−

Isource

Peak source current, VGS = 0 V (Note 3)

300

Isink

Peak sink current, VGS = 12 V (Note 3)

500

VDRVlow

DRV pin level at VCC close to VCC(min) with a 33 kW resistor to GND

−

VDRVhigh

DRV pin level at VCC= 28 V – DRV unloaded

3. Guaranteed by design

CURRENT COMPARATOR

IIB

Input Bias Current @ 0.8 V input level on pin 4

0.02

VLimit1

Maximum internal current setpoint – TJ = 25 °C

0.744

0.8

0.856

VLimit2

Maximum internal current setpoint – TJ = −40° to 125 °C

0.72

0.8

0.88

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