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BAS40LP 数据表(PDF) 2 Page - GOOD-ARK Electronics |
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BAS40LP 数据表(HTML) 2 Page - GOOD-ARK Electronics |
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2 / 4 page ![]() BAS40LP DFN 1.0X0.6-2L Plastic-Encapsulate Schottky Barrier Diode 2 / 4 Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse Breakdown Voltage (Note 5) V(BR)R IR = 10μA 40 - - V Forward Voltage VF tp < 300μs, IF = 1.0mA tp < 300μs, IF = 40mA - - 380 1000 mV Reverse Leakage Current (Note 5) IR tp < 300μs, VR = 30V 20 200 nA Total Capacitance CT VR = 0V, f = 1.0MHz 2.3 5.0 pF Reverse Recovery Time Trr IF=10mA through IR= 10mA to IR = 1.0mA, RL = 100Ω 5.0 nS Notes: 4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.goodark.com 5. Short duration pulse test used to minimize self-heating effect. |
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