MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

4.0

V

Collector Current

IC

500

mA

Base Current

IB

100

mA

Peak Base Current

IBM

200

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=80V

100

nA

ICBO

VCB=80V, TA=150°C

20

µA

ICEO

VCE=60V

100

nA

BVCEO

IC=1.0mA

80

V

BVEBO

IE=100µA

4.0

V

VCE(SAT)

IC=100mA, IB=10mA

0.25

V

VBE(ON)

VCE=1.0V, IC=100mA

1.20

V

hFE

VCE=1.0V, IC=10mA

100

hFE

VCE=1.0V, IC=100mA

100

fT

VCE=2.0V, IC=10mA, f=100MHz (CMPTA06)

100

MHz

fT

VCE=1.0V, IC=100mA, f=100MHz(CMPTA56)

50

MHz

CMPTA06 NPN

CMPTA56 PNP

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

SOT-23 CASE

Central

Semiconductor Corp.

TM

R5 (13-November 2002)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPTA06,

CMPTA56 types are complementary silicon

transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for small signal general

purpose and switching applications.

MARKING CODES: CMPTA06 : C1G

CMPTA56 : C2G