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SSF2418EBK 数据表(PDF) 2 Page - GOOD-ARK Electronics

部件名 SSF2418EBK
功能描述  20V Dual N-Channel MOSFET
PDF  4 Pages
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制造商  GOOD-ARK [GOOD-ARK Electronics]
网页  http://www.goodark.com
标志 GOOD-ARK - GOOD-ARK Electronics

SSF2418EBK 数据表(HTML) 2 Page - GOOD-ARK Electronics

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Rev.1.0
SSF2418EBK
20V Dual N-Channel MOSFET
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
±10
uA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.5
1
V
VGS=4.5V, ID=6A
18
21
mΩ
VGS=4.0V, ID=5.5A
19
22
mΩ
VGS=3.1V, ID=5A
21
26
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=2.5V, ID=4A
25
30
mΩ
Forward Transconductance
gFS
VDS=5V,ID=6A
7
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
650
PF
Output Capacitance
Coss
170
PF
Reverse Transfer Capacitance
Crss
VDS=10V,VGS=0V,
F=1.0MHz
150
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
20
nS
Turn-on Rise Time
tr
50
nS
Turn-Off Delay Time
td(off)
64
nS
Turn-Off Fall Time
tf
VDD=10V,ID=1A
VGS=4.5V,RGEN=10Ω
40
nS
Total Gate Charge
Qg
8
nC
Gate-Source Charge
Qgs
1.5
nC
Gate-Drain Charge
Qgd
VDS=10V,ID=6A,
VGS=4.5V
2
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1A
0.76
1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.



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