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PBV-R001-F1-1 数据表(PDF) 1 Page - RHOPOINT COMPONENTS |
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PBV-R001-F1-1 数据表(HTML) 1 Page - RHOPOINT COMPONENTS |
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1 / 2 page ![]() Precision Resistor Type PBV Spec Sheet R361-1/2 July 97 Technical Data Resistance range 0.5 mOhm - 1 Ohm Tolerances 0.5 %, 1 %, 5 % Temperature coefficient ( R > 10 mOhm ) < 30 ppm/K ( 20 °C to 60 °C ) Applicable temperature range -55 °C to +125 °C Load capacity 3 W / 10 W with heatsink provided Thermal resistance to aluminum base plate Rth < 3 K/W Thermal resistance to ambient Rth < 15 K/W Dielectric withstanding voltage 500 V AC Inductance ( R = 50 mOhm ) < 5 nH Stability ( nominal load at 70 °C ) deviation < 0.5 % after 2,000 h Remarks: - Standard resistance values according to E12 with the additionel values of 2 and 5 - Minimum quantity of other values on request - Tolerance 0.5% for values from 4,7 mOhm The four-terminal resistor type PBV derived from type PBH is especially designed for the low impedance range, in order to obtain lowest temperature coefficient values, and in order to guarantee the independence of the resistance value from the soldering quality. The use of the precision resistance material MANGANIN combined with a highly temperature resistant and humidity insusceptible Duroplast cover as well as optimization of layout and lines result in a high longterm stability, low temperature coefficient and low inductance. The shape is compatible with the latest power transistors. The resistor is mounted through a center bore or spring clamp to a heatsink, whereby the large area of the base plate will provide excellent heat transfer. The low thermal resistance between resistor foil and aluminum base plate warrants for a low temperature rise at nominal load in this configuration and permits transient overloading up to one magnitude. The resistor is ideally suited for applications in power electronic and control technique, as most applications at inductive loading will require operation with switched power regulating units. Short connection distances and small dimensions at high load capacity and low inductance are a prerequi- site to obtain high switching frequencies. Temperature dependence of the electrical resistance of ISA-PLAN Resistors -40 -20 20 40 60 80 100 120 T [oC] -0.4 -0.2 0.2 ∆R/R 20 [%] dimensions (mm) 0 20 40 60 80 100 120 T G / [ oC] 0.25 0.5 0.75 1 P / P Nenn power derating curve |
类似零件编号 - PBV-R001-F1-1 |
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类似说明 - PBV-R001-F1-1 |
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