KTA1663 datasheet(1/2 Pages) HOTTECH

部件名	KTA1663

功能描述	Plastic-Encapsulate Transistors

PDF	2 Pages

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制造商	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

网页	http://www.hottech.net.cn/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

• High current applications

•Complementary to KTC4375

Maximum Ratings (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-30

V

Collector-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current -Continuous

IC

-1.5

A

Collector Power dissipation

PC

500

mW

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=-1mA, IE=0

-30

V

Collector-emitter breakdown voltage

VCEO

IC=-10mA, IB=0

-30

V

Emitter-base breakdown voltage

VEBO

IE=-1mA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-30V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-0.1

μA

DC current gain

hFE

VCE=-2V, IC=-0.5A

100

320

Collector-emitter saturation voltage

VCE(sat)

IC=-1.5A, IB=-30mA

-2

V

Base-emitter voltage

VBE

VCE=-2V, IC=-0.5A

-1

V

Transition frequency

fT

VCE=-2V, IC=-500mA

120

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0,f=1MHz

50

MHz

CLASSIFICATION OF hFE

Rank

O

Y

Range

100-200

160-320

KTA1663 (PNP)

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

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