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2N6050 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 2N6050
功能描述  isc Silicon PNP Darlingtion Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2N6050 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Darlingtion Power Transistor
2N6050
DESCRIPTION
·
Built-in Base-Emitter Shunt Resistors
·
High DC current gain
·
Complement to type 2N6057
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
ThermalResistance, Junction to Case
1.17
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-12
A
ICM
Collector Current-Peak
-20
A
IB
Base Current
-0.2
A
PC
Collector Power Dissipation@TC=25℃
150
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃


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