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2N6510 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6510 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2N6510 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 200 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A ;IB= 3A 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.7 V IEBO Emitter Cutoff Current VEB= 6V; IC= 0 3.0 mA hFE DC Current Gain IC= 3A; VCE= 3V 10 50 Is/b Second Breakdown Collector Current with Base Forward Biased VCE= 35V,t= 1.0s,Nonrepetitive 3.16 A VCE= 200V,t= 1.0s,Nonrepetitive 0.1 A COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 100 pF Switching Times td Delay Time VCC= 200V; IC= 3A; IB1= -IB2= 0.6A 0.2 μ s tr Rise Time 1.5 μ s ts Storage Time 5.0 μ s tf Fall Time 1.5 μ s |
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