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2N6530 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6530 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2N6530 DESCRIPTION · High DC Current Gain- : hFE= 1000(Min.)@IC= 5A · Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 80V(Min.) · Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A APPLICATIONS · Power switching · Hammer drivers · Series and shunt regulators · Audio amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE= 100Ω 80 V VCEV Collector-Emitter Voltage VBE= -1.5V 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 8 A ICM Collector Current-peak 15 A IB Base Current 250 mA PC Collector Power Dissipation @TC=25℃ 65 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.92 ℃ /W |
类似零件编号 - 2N6530 |
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类似说明 - 2N6530 |
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