STD2805 datasheet(2/3 Pages) ISC

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INCHANGE Semiconductor

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isc Silicon PNP Power Transistor

STD2805

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)EBO

Emitter-Base Breakdown Voltage

IE=-0.1mA,IC=0

-6

V (BR)CEO)

Collector-Emitter Breakdown Voltage

IC=-1mA, IB=0

-60

V(BR)CBO

Collector-Base Breakdown Voltage

IC=-0.1mA ,IE=0

-60

VCE(sat) *

Collector-Emitter Saturation Voltage

IC= -100mA; IB= -5mA

-50

IC= -2A; IB= -50mA

-0.3

IC= -3A; IB= -0.15A

-0.4

IC= -5A; IB= -0.2A

-0.6

VBE(sat)*

Base-Emitter Saturation Voltage

IC= -2A; IB= -50mA

-1.2

ICBO

Collector Cutoff Current

VCB= -60V; IE= 0

-100

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-100

hFE*

DC Current Gain

IC= -100mA; VCE= -2V

200

400

IC= -5A; VCE= -2V

IC= -10A; VCE= -2V

Current-Gain—Bandwidth Product

IC= -50mA ;VCE= -10V

150

MHZ

COB

Output Capacitance

VCB=-10V;f=1.0MHz

* Pulse Test: PW≤300μs, Duty Cycle≤1.5%

Switching Times; Resistive Load

ton

Tur-on Time

IC= -1A; VCC= 30V;

IB1= IB2= -0.1A

Storage Time

600

Fall Time

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